Low dimensional H2 gas in semiconductors

• Antragsteller: Privatdozent Dr. Eduard Lavrov
• Fachliche Zuordnung: Experimentelle Physik der kondensierten Materie
• Förderung: Förderung von 2009 bis 2012
• Projektkennung: Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 106393372

In Si, Ge, and GaAs, high concentrations of hydrogen result in extended planar defects called platelets. In semiconductors hydrogenated from a plasma, the dominating structures are those lying in the {111} crystallographic planes. At least two types of the {111} platelets are known to exist in Si and Ge. The one which will be addressed in this project is characterized by a dielectric constant є ≈ 1 and holds a two dimensional gas of molecular hydrogen. The present project is focused on a fundamental aspect of the platelets, the properties of the two dimensional H2 gas trapped within the {111} platelets. Our main interests include phase transitions; H2 nuclear spin-flip; intermolecular interaction; and interaction of H2 with the host atoms.

• DFG-Verfahren: Sachbeihilfen