Theoretical and experimental exploration of InP heterojunction bipolar transistor (HBT) characteristics for device and circuit design

• Antragsteller: Professor Dr.-Ing. Michael Schröter
• Fachliche Zuordnung: Elektronische Halbleiter, Bauelemente und Schaltungen, Integrierte Systeme, Sensorik, Theoretische Elektrotechnik
• Förderung: Förderung von 2009 bis 2013
• Projektkennung: Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 110304428

• Erstellungsjahr: 2013

Zusammenfassung der Projektergebnisse

In summary, the results of this project have demonstrated that, after few minor modifications, both HI-CUM/L2 and L0 are at least as suitable as any special model for accurately describing InP HBTs over bias, temperature, and frequency. As a significant advantage over existing published models, the complete set of HICUM/L2 model parameters is geometry scalable over a wide range of dimensions and contact configurations. Therefore, HICUM/L2 with its physics-based formulation is the first InP HBT model that enables the same circuit optimization and statistical modeling capability as Si-based BJTs and HBT technology have been offering for years. Since HICUM/L0 parameters can be automatically generated from HICUM/L2 parameters, HICUM/L0 also offers such features at a computational expense similar to or lower than that of VBIC. An additional advantage of both HICUM/L2 and L0 is their wide availability in (commercial) circuit simulators as well as their support from foundries and the EDA industry.

Projektbezogene Publikationen (Auswahl)

• “Application of HICUM/L0 to InP DHBTs using single-transistor parameter extraction”, 23rd Int. Conf. on Indium Phosphide and Rel. Mat., Berlin, Germany, 4 pages, May 2011
  T. Nardmann, S. Lehmann, M. Schröter
  
• "Analysis of high frequency performance of InP and SiGe HBTs at cryogenic temperatures", Fifth Int. Conf. on Micro-Nanoelectronics, Heraklion (Greece), 2p. , 2012
  P. Sakalas, M. Schröter
  
• "Microwave noise in InP and SiGe HBTs: Modeling and Challenges", Proc. 22th Int’l. Conf. on Noise and Fluctuations, Montpellier, France, 4p. , June 23-29, 2013
  P.Sakalas, M. Schröter
  
• “A geometry scalable approach to InP HBT compact modeling for mm-wave applications”, IEEE CSICS, pp., 2013
  T. Nardmann, P. Sakalas, F. Chen, T. Rosenbaum, M. Schroter
  
• “A length-scalable compact model for InP DHBTs”, ISCDG, 4p., 2013
  T. Nardmann, M. Schröter, P. Sakalas, B. Lee