Theoretical and experimental exploration of InP heterojunction bipolar transistor (HBT) characteristics for device and circuit design
Final Report Abstract
In summary, the results of this project have demonstrated that, after few minor modifications, both HI-CUM/L2 and L0 are at least as suitable as any special model for accurately describing InP HBTs over bias, temperature, and frequency. As a significant advantage over existing published models, the complete set of HICUM/L2 model parameters is geometry scalable over a wide range of dimensions and contact configurations. Therefore, HICUM/L2 with its physics-based formulation is the first InP HBT model that enables the same circuit optimization and statistical modeling capability as Si-based BJTs and HBT technology have been offering for years. Since HICUM/L0 parameters can be automatically generated from HICUM/L2 parameters, HICUM/L0 also offers such features at a computational expense similar to or lower than that of VBIC. An additional advantage of both HICUM/L2 and L0 is their wide availability in (commercial) circuit simulators as well as their support from foundries and the EDA industry.
Publications
- “Application of HICUM/L0 to InP DHBTs using single-transistor parameter extraction”, 23rd Int. Conf. on Indium Phosphide and Rel. Mat., Berlin, Germany, 4 pages, May 2011
T. Nardmann, S. Lehmann, M. Schröter
- "Analysis of high frequency performance of InP and SiGe HBTs at cryogenic temperatures", Fifth Int. Conf. on Micro-Nanoelectronics, Heraklion (Greece), 2p. , 2012
P. Sakalas, M. Schröter
- "Microwave noise in InP and SiGe HBTs: Modeling and Challenges", Proc. 22th Int’l. Conf. on Noise and Fluctuations, Montpellier, France, 4p. , June 23-29, 2013
P.Sakalas, M. Schröter
- “A geometry scalable approach to InP HBT compact modeling for mm-wave applications”, IEEE CSICS, pp., 2013
T. Nardmann, P. Sakalas, F. Chen, T. Rosenbaum, M. Schroter
- “A length-scalable compact model for InP DHBTs”, ISCDG, 4p., 2013
T. Nardmann, M. Schröter, P. Sakalas, B. Lee
