Graphene on SiC wafers for high performant RF transistors GRAPHIC RF

• Applicants: Professor Dr. Oleg Pankratov; Professor Dr. Thomas Seyller
• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering ; Experimental Condensed Matter Physics
• Term: from 2010 to 2016
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 163392002

The project aims to improve the basic knowledge on epitaxial graphene growth on SiC to establish the possibility to obtain the electronics quality required for Rf device fabrication. Different polytypes will be considered.simulations will be implemented. Standards and references will be established. Rf devices will be fabricated and characterised. Also other advanced devices will be considered.

• DFG Programme: Research Grants
• International Connection: France, Italy, Sweden
• Participating Persons: Dr. Jean Camassel; Dr. Vito Raineri; Professorin Dr. Rositza Yakimova