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Raman spectroscopic investigations of epitaxial multiferroic thin films

Subject Area Experimental Condensed Matter Physics
Term from 2010 to 2015
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 186107688
 
Final Report Year 2015

Final Report Abstract

The main results achieved are summarized in the following: Temperature-dependent Raman spectroscopy and X-ray diffraction measurements were employed to study the structural phase transition between monoclinic and orthorhombic phases in polycristalline BiCrO3 and to determine the transition temperature. - The dielectric function and band gap of BiCrO3 films was determined for the first time based on spectroscopic ellipsometry results. - The epitaxial relation between BiCrO3 films and different substrates (NdGaO3, LSAT) was determined by using azimuthal / polarisation-dependent Raman measurements corroborated with simulations based on crystal symmetry and with X-ray diffraction results. A similar method was employed for the characterisation of the feroelectric / feroelastic domain structure in the case of epitaxial BiFeO3 films deposited on rare earth scandate substrates. - Raman studies have confirmed very good epitaxy of the tetragonal-like (T-like) BiFeO3 films grown on LaAlO3 substrates, as indicated by the remarkable azimuthal / polarisation dependence of the Raman spectra. The larger numbers of phonons observed in the spectra of T-like BFO films as compared with that of R-like BFO films is consistent with a Cc monoclinic structure, with a large tetragonal c/a ratio. The dielectric function and the bandgap of T-like BFO are blue shifted by ca. 0.3 eV as compared with the not strained films (R-like). - Grüneisen parameters for BiFeO3 epitaxial thin films have been determined from the relative volume change and the relative shifts of the Raman modes induced by the piezoelectric strain. - The crystalline structure in NiFe2O4 and CoFe2O4 thin films and sub-micron structures was investigated by Raman spectroscopy and thereby a strain induced symmetry lowering was evidenced. - The band gap as well as the diagonal and the off-diagonal components of the dielectric function of ferrimagnetic NiFe2O4 and CoFe2O4 epitaxial thin films grown on Nb-doped SrTiO3 substrates were determined in the spectral range from 0.7 eV (diagonal) and from 1.7 eV (off-diagonal) to 5 eV by combining spectroscopic ellipsometry and magneto-optical Kerr effect measurements.

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