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Two Routes from Mott Insulators to Metals: Dynamics of Correlated Charge Carriers

Subject Area Experimental Condensed Matter Physics
Term from 2012 to 2025
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 200045292
 
Final Report Year 2024

Final Report Abstract

Two Routes from Mott Insulators to Metals: Dynamics of Correlated Charge Carriers At the Mott transition, metals are driven to an insulating state when the electron-electron repulsion increases strongly. As with any first-order phase transition (e.g. water and ice), there is a regime of coexistence in the phase diagram where metallic and insulating regions coexist, with the ratio of the two components varying with temperature and correlation strength. This electronic phase separation leads to a divergence of the dielectric constant near the percolation threshold, as our pressure- and temperature-dependent optical and dielectric measurements on organic conductors show for the first time. By combining quantum mechanical DMFT calculations with the effective medium theory, the behavior is also modeled theoretically. It was of great advantage of using quantum spin liquids as model systems that no magnetic order occurs down to lowest temperatures, and thus the purely electronic phase diagram can be investigated. We suspect that a region of coexistence and inhomogeneity also occurs in other metal-insulator phase transitions and suggest investigations in this regard. With dielectric spectroscopy, we were also able to establish a macroscopic method that provides insights into the microscopic structure of the bulk materials and can also be used under extreme conditions (high but also ultra-low temperatures, high pressures or strong magnetic fields). Moreover, despite their essentially metallic behavior, the electrodynamic properties of strongly correlated electron systems show a maximum in the optical conductivity at finite frequencies. This displaced Drude peak indicates an incipient localization of the metallic charge carriers as proposed by a theory of transient localization. Further investigations will shed light on the temperature behavior of the incipient localization and the scaling with the interaction strength. We were able to determine the temperature and frequency dependence of the electronic scattering rate: the quadratic temperature curve of the resistance commonly observed corresponds to a quadratic increase with frequency. For the first time, we were able to quantitatively determine ω/T scaling in the Fermi-liquid range as a function of the correlation strength. These observations will be extended to transition metal oxides, which, however, have a significantly higher energy scale (temperature and frequency).

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