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Nitride-based resonant cavity single photon sources (A08)

Subject Area Theoretical Condensed Matter Physics
Term from 2012 to 2019
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 43659573
 
Nitride based UV single photon sources for room temperature operation will be fabricated and characterized in this project. Our approach is based on position controlled single GaN/AlN quantum dots grown by MOVPE inside resonant cavity structures using a nitride-based buried stressor. The optical and electronic properties of the individual single quantum dots are analyzed and directly correlated to their atomic real structure by in-TEM cathodoluminescence. Single-photon emitter devices will be developed including monolithically-integra¬ted optical elements (mirrors, resonant microcavity structures, micro lenses) for enhanced light extraction. GaN quantum dot intraband transitions will be explored for IR single photon generation at 1.3 and 1.55 µm.
DFG Programme Collaborative Research Centres
Major Instrumentation Monochromator
Applicant Institution Technische Universität Berlin
Co-Applicant Institution Otto-von-Guericke-Universität Magdeburg
 
 

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