Entwicklung von monolitischen Pixeldetektoren auf verarmtem Silizium (DMAPS)

• Applicant: Professor Dr. Norbert Wermes
• Subject Area: Nuclear and Elementary Particle Physics, Quantum Mechanics, Relativity, Fields
• Term: from 2013 to 2018
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 237333540

• Final Report Year: 2017

Final Report Abstract

In conclusion we can state that the goals of the DFG project has been fully achieved. Even more so, the development of a large, functional, fully monolithic CMOS Pixel Chip was originally not within the proposed reach of the proposal. With the systematic investigation of different newly available technology features of different vendors and subsequent selection of the appropriate approach for a large CMOS matrix we could advance this interesting and promising new pixel detector development into a stage of serious consideration for the LHC experiments' upgrade. Not at the least due to our developments CMOS Pixels are going to be included in the ATLAS Technical Design Report as an option for the ATLAS Upgrade Detector. From this point on - beyond the exploration phase - further developments are within BMBF funding. We consider a follow up proposal addressing aspects of generic monolithic and compact CMOS pixel modules, suitable in particular for X-ray imaging and similar applications.

Publications

• DMAPS: a fully depleted monolithic active pixel sensor-analog performance characterization. JINST 10 (2015) 02, P02013
  M. Havranek, T. Hemperek, H. Krüger, Y. Fu, L. Germic, T. Kishishita, T. Obermann, N. Wermes
  
• A Monolithic active pixel sensor for ionizing radiation using a 180nm HV-SOI process. Nucl. Instrum. Meth. A796 (2015) 8-12
  Tomasz Hemperek, Tetsuichi Kishishita, Hans Krüger, Norbert Wermes
  
• From Hybrid to CMOS Pixels ... a possibility for LHC's pixel future? iWoRiD Honorary Talk, Proceedings of iWORiD-Conference 2015 JINST (2015) 10 C12023
  N. Wermes
  
• Characterization of Depleted Monolithic Active Pixel detectors implemented with a high-resistive CMOS technology, Nucl. Instrum. Meth. A824 (2016) 417-418
  T. Kishishita, T. Hemperek, P. Rymaszewski, T. Hirono, H. Krüger, N. Wermes
  
• Neutron irradiation test of depleted CMOS pixel detector prototypes, JINST 12 (2017) P02021
  I. Mandic, ..., T. Hemperek, M. Daas, F. Hügging H. Krüger, D.-L. Pohl, N. Wermes
  
• Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line. JINST 12 (2017) no.06, P06020
  D. -L. Pohl, T. Hemperek, F. Hügging, J. Janssen, H. Krüger, A. Macchiolo, N. Owtscharenko, I. Caicedo Sierra, L. Vigani, N. Wermes