Interface-Dominated Semiconductor Laser Structures
(B07)
Subject Area
Experimental Condensed Matter Physics
Term
from 2013 to 2021
Project identifier
Deutsche Forschungsgemeinschaft (DFG) - Project number 223848855
This project is focussed on the design, growth, characterization, and analysis of novel interface-dominated semiconductor laser structures with spatially indirect barrier/quantum well combinations. The main goal is to realize systems with comparable gain but reduced intrinsic losses in comparison to the more established direct-gap compounds with type-I-band alignment used for lasers in these spectral ranges. Furthermore, it is planned to generate short-pulses from these systems by adding saturable absorbers in a mode-locking geometry.
DFG Programme
Collaborative Research Centres
