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Interface-Dominated Semiconductor Laser Structures (B07)

Subject Area Experimental Condensed Matter Physics
Term from 2013 to 2021
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 223848855
 
This project is focussed on the design, growth, characterization, and analysis of novel interface-dominated semiconductor laser structures with spatially indirect barrier/quantum well combinations. The main goal is to realize systems with comparable gain but reduced intrinsic losses in comparison to the more established direct-gap compounds with type-I-band alignment used for lasers in these spectral ranges. Furthermore, it is planned to generate short-pulses from these systems by adding saturable absorbers in a mode-locking geometry.
DFG Programme Collaborative Research Centres
Applicant Institution Philipps-Universität Marburg
 
 

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