Interface engineering for the chemical and electronic passivation of group III phosphide semiconductors to be used in highly efficient photoelectrochemical tandem cells for water splitting

• Applicant: Professor Dr. Wolfram Jaegermann
• Subject Area: Physical Chemistry of Solids and Surfaces, Material Characterisation ; Solid State and Surface Chemistry, Material Synthesis ; Synthesis and Properties of Functional Materials ; Physical Chemistry of Molecules, Liquids and Interfaces, Biophysical Chemistry
• Term: from 2014 to 2018
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 259170530

The main goal of the project is the study of physical and photoelectrochemical processes occurred at the interfaces of group 3 phosphide semiconductors (InP, GaP, GaInP2) with water and aqueous electrolyte solutions in order to set the rules for their control. In this context it is necessary to study the surface electronic structure of 3 5 compounds and their solid solutions to provide surface modification for tuning of the surface electronic properties of these semiconductors to align their surface potentials with the potentials needed for running photoelectrochemical reactions.The aim is to understand the underlying laws determining the alignment of the semiconductor band edges in relation to the catalytic centers and to the hydrogen and oxygen redox potentials in the solution. Furthermore, feasible recipes for the chemical and the electronic passivation of the semiconductor surface and the semiconductor/electrolyte interface by appropriate buffer layers have to be revealed. Finally, the semiconductor/passivation layer/cocatalyst/electrolyte junction will be investigated and optimized, which needs a systematic step by step approach.

• DFG Programme: Research Grants
• International Connection: Russia
• Participating Institution: Russian Foundation for Basic Research
• Participating Persons: Privatdozent Dr. Bernhard Kaiser; Dr. Mikhail V. Lebedev