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Ferromagnetic proximity effect in ferromagnetic-semiconductor hybrid structure (C02)

Subject Area Experimental Condensed Matter Physics
Term from 2015 to 2023
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 249492093
 
The target of studies will be the spin-spin s-d (p-d) exchange interaction between magnetic moments in a ferromagnetic layer and electrons (holes) in a CdTe/CdMgTe semiconductor quantum well, which leads to the ferromagnetic proximity effect in these hybrid structures. We will optimize the magnitude of the exchange interaction by choosing metallic (Fe, Co) or insulating (NiFe2O4, FeNiO3) ferromagnetic materials and varying the distance between the semiconductor quantum well and the ferromagnetic layer. We will further concentrate on realizing the electric control of the coupling strength of the proximity effect and will also work on demonstrating the spin orientation of holes by elliptically polarized phonons in non-magnetic GaAs semiconductor layers.
DFG Programme CRC/Transregios
Applicant Institution Technische Universität Dortmund
Co-Applicant Institution Russian Academy of Sciences
Ioffe Institute
, until 2/2022
 
 

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