Project Details
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Rare Earth:Photoconductors for Terahertz Generation and Detection

Subject Area Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Experimental Condensed Matter Physics
Term from 2015 to 2023
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 278381540
 
Final Report Year 2024

Final Report Abstract

The aim of REPHCON was the development of high-performance photoconductive terahertz sources and detectors based on ErAs:In(Al)GaAs. The photoconductors are operated with 1550 nm or 1030-1060 nm laser systems, both targetting continuous wave and pulsed operation. The research activities included in particular material physics research on optimizing the photo-conducting semiconductor material for terahertz applications, electrotechnical research that considered optimal antenna and electrode structures, questions from optics regarding the outcoupling of the Terahertz wave and in-coupling of the optical laser signal as well as system-level research in terms of integration into easily usable packages for their application in experiments. The 1st part of the project was carried out at the TUDa (FG Preu), the 2nd phase in cooperation of TUDa with TUM (FG Koblmüller). The photoconductors developed are now amongst the best worldwide. The following list summarizes the main results: Successful development of photoconductors for continuous wave operation at 1550 nm, both as a source and as a receiver. To the best of the applicants' knowledge, we achieved the largest published dynamic range to date of 52 dB with a continuous wave system and solely photoconductors at 1550 nm. Lowest published noise floor to date at room temperature of 1.8fW/Hz at 188 GHz. - System consisting of antenna-coupled pulsed photoconductors and a state-of-the-art 1550 nm pulsed laser system with a dynamic range of 110 dB (1 min. measurement time), 472μW THz power with ~45 mW laser power and > 6.5 THz bandwidth. - Demonstration of operation at 1030 nm. Fiber-coupled packages for both sources and receivers. - Transfer of growth to a molecular beam epitaxy facility in Germany.

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