Ion-beam induced rippling at the amorphous-crystalline interface in silicon

• Antragsteller: Dr. Jörg Grenzer; Professor Dr. Ullrich Pietsch
• Fachliche Zuordnung: Experimentelle Physik der kondensierten Materie
• Förderung: Förderung von 2006 bis 2010
• Projektkennung: Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 30757250

rradiation. In the second period of the project, i.e. after finding of the optimum condition for crystalline ripple formation, we plan to vary the ion beam energy in a wider range (5 keV < E < 100 keV) in order to tune the depth of the buried ripples and to study energy dependent processes. It might become necessary to apply this technique to create buried lateral mesoscopic and/or nano structures in Si/SiGe quantum well structures. For basic science investigation such SiGe wells can be used as marker layers to probe the depth of ion beam erosion and the strain field inside nanostructure by means of X-ray analysis. Finally, deep understanding of irradiation process, considering initial anisotropic structure, and the reasons of an enormous mass transport due to irradiation and detailed features of ripple formation will provide unique possibility of nanopatterning and production of novel nanostructured materials.The project will be carried out in close cooperation between the solid state physics group at Siegen university (X-ray investigations, FEM) with FZ Rossendorf (Ion beam treatment, AFM, TRIM) accompanied by ID1 group at European Synchrotron radiation Facility (ESRF), where most of the X-ray scattering experiments will be performed.

• DFG-Verfahren: Sachbeihilfen
• Internationaler Bezug: Frankreich
• Beteiligte Personen: Dr. Stefan Facsko; Dr. Till Hartmut Metzger-Kleinberg