Doping of poly-Si contacts for high efficiency back junction back contact silicon solar cells using inkjet-printed doping sources

• Applicant: Dr.-Ing. Udo Römer
• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: from 2017 to 2019
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 396302807

Today, highest crystalline silicon solar cell efficiencies are achieved by using carrier selective contacts, like poly-Si contacts, on back contacted solar cells. Common methods for the fabrication of the doped regions of back contacted solar cells, however require much more complex fabrication methods when utilized in combination with poly-Si contacts.In this project inkjet based processes for the local doping of carrier selective poly-Si contacts will be investigated. This could enable a much simplified method for the fabrication of high efficiency back contacted solar cells. Both, commercial spin-on dopant pastes and highly doped silicon nano-particle inks will be investigated for this purpose.

• DFG Programme: Research Fellowships
• International Connection: Australia
• Host: Professorin Alison Lennon, Ph.D.