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Microstructured Carbon/SiCX (X=O, N)-Based High Temperature Strain Gauge

Subject Area Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Term from 2019 to 2023
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 411658150
 
Final Report Year 2024

Final Report Abstract

The foundation of this work was laid out based on the efficiency of silicon oxycarbide (SiOC) as a functional material for piezoresistive device applications. The realization of a cost-efficient strain gauge which can operate at elevated temperature was the main objective of this work. In cooperation between the Dispersive Solids group of Prof. Ralf Riedel and EMK of Prof. Helmut Schlaak†, this project has successfully completed the goal to have a comprehensive understanding of the piezoresistive behavior of silicon oxycarbide (SiOC) thin films. Furthermore, a fully-realized SiOC-based strain gauge prototype was fabricated and evaluated to have an ultrahigh gauge factor (GF ~ 5000) at elevated temperature up to 700 °C that are superior to conventional metallic and silicon-based strain gauges. As a main impact of the project, the strain gauges based on C/SiOC ceramic thin films will allow low-cost piezoresistive sensing at elevated temperatures and in harsh environmental conditions. At the same time, no expensive sensor electronics will be needed, as C/SiCX typically provides high GF values of the order of 103, i.e., a high sensor sensitivity. The results achieved within the project enables the development of pressure sensing devices for gas turbines or gasification reactors.

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