Selective area growth of cubic group III-Nitrides on nano-patterned 3C-SiC (001) substrates

• Applicant: Professor Dr. Donat Josef As
• Subject Area: Experimental Condensed Matter Physics
• Term: from 2019 to 2023
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 418748882

The aim of the project is the growth of cubic group III-Nitrides on pre-patterned 3C-SiC (001) substrates with reduced dislocation density. Using e-beam lithography (EBL) and reactive ion-etching (RIE) V-shaped and U-shaped grooves with dimensions in the 50 nm scale will be etched into the substrate or through dielectric masks. The grooves and openings with dimensions in the nanometer scale will be selectively overgrown with AlN and GaN via molecular beam epitaxy (MBE). If the nanostructures have a high aspect ratio (ratio depth to width >>1) an effective dislocation filtering shall occur within the openings or grooves and the dislocation density shall be reduced by several orders of magnitude in cubic group III Nitrides. The cubic group III-nitrides will be characterized by high resolution TEM, AFM, HRXRD, Raman, cathodoluminescence and micro-photoluminescence. In addition, the coalescence of cubic GaN epilayers will be studied on structures with suitable selection of the distances of the openings.

• DFG Programme: Research Grants