Efficient Subharmonically Locked THz Indium Phosphide Heterojunction Bipolar Transistor Circuits for Mobile Applications ((2)-C11)

• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: from 2019 to 2020
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 287022738

Efficient, compact, beam-steered electronic sources are needed in mobile THz sensing and localization applications. The subharmonic injection locking of push-push induim phosphide (InP) heterojunction bipolar transistor (HBT) oscillator cores is investigated. InP HBT circuits with locking input targeting 500 GHz signal generation are designed, measured and analyzed at UDE, the fabrication is done in an available foundry service. A detailed model of the subharmonic injection locking process is developed, and measured performance in terms of output power, power efficiency, and locking range are investigated.

• DFG Programme: CRC/Transregios
• Subproject of: TRR 196: Mobile Material Characterization and Localization by Electromagnetic Sensing
• Applicant Institution: Universität Duisburg-Essen
• Project Head: Professor Dr. Nils Weimann