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HEFOS – High Electric Fields at Organic Semiconductor Heterojunction Interfaces

Applicant Professor Dr. Sebastian Reineke, since 8/2021
Subject Area Experimental Condensed Matter Physics
Term from 2019 to 2024
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 426730652
 
Final Report Year 2023

Final Report Abstract

HEFOS investigated the energy states of excited molecular states at type-II heterojunctions in organic semiconductor devices. The so-called charge-transfer states at such interfaces are of special interest for photovoltaic applications, photodetectors, as well as light-emitting diodes (LEDs). Heterojunctions are used in all these components to generate excited states (“excitons”) through light absorption or to generate light through exciton recombination. Such interfaces typically exhibit a significant voltage drop over a few nanometers, leading to high intrinsic electric fields. In contrast to intramolecular states, intermolecular charge transfer states sport an electric dipole extension of several nanometers. Therefore, their response to electric fields is significant. In LEDs and photodetectors, external voltages create external electric fields that superimpose these internal electric fields. The goal of this project was to manipulate the electric fields (both internal and external) at the interface of donor and acceptor materials to shift the spectral range of emission and absorption, i.e. to control the energy of the charge-transfer states. As a first result, we demonstrated that by using doped organic layers, it is possible to selectively manipulate the electric fields at the heterojunction to study the state energies. As a second result, we achieved the shifting of the energy states of charge transfer states at the interface through internal and external electric fields. This effect could be made visible to the naked eye through the change in emission color.

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