Self-Diffusion in beta-Ga2O3 Single Crystals

• Applicant: Professor Dr. Harald Schmidt
• Subject Area: Thermodynamics and Kinetics as well as Properties of Phases and Microstructure of Materials
• Term: from 2019 to 2024
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 433461542

Gallium oxide (beta-Ga2O3) is an ultra-wide bandgap semiconductor with increasing importance because of its multifunctional use in diverse applications (power electronics, gas sensors, optoelectronics, solar-blind photo detectors, catalysis, Schottky barrier diodes, conducting transparent oxides ). The electrical and optical properties of beta-Ga2O3 depend critically on the concentration, charge state and migration of native point defects (vacancies and interstitial). Self-diffusion experiments can give information on the nature of native defects and their mobility in the material. However, up to now there are no self-diffusion studies available in literature. The aim of the present proposal is the systematic experimental determination of oxygen and gallium tracer diffusivities in beta-Ga2O3 single crystals as a function of temperature. This work will be carried out with secondary ion mass spectrometry (SIMS). Oxygen tracer diffusion experiments will be achieved by isotope exchange using 18O2 as a gaseous tracer source. In order to investigate the Ga diffusion, Al will be used as a substitute tracer. From the results, activation energies and pre-exponential factors will be derived. The diffusion experiments will be done as a function of oxygen partial pressure, defined silicon doping (n-type), and crystal orientation. By consideration of fundamental defect reactions and comparison to theoretical work as given in literature, certain model assumptions on dominating defect structures and their kinetics can be proven or discarded. The results will give a comprehensive picture of the diffusion related point defect structure present in gallium oxide.

• DFG Programme: Research Grants