Nanomaterial-based platform electronics for PUF circuits with extended entropy sources

• Applicants: Dr.-Ing. Sascha Hermann; Professor Dr. Stefan Katzenbeisser; Professorin Dr.-Ing. Elif Bilge Kavun, Ph.D.
• Subject Area: Security and Dependability, Operating-, Communication- and Distributed Systems ; Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: since 2020
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 439892735

In this project we investigate the potential of advanced NanoMaterial (NM) circuits manufactured in a modular platform technology to serve as Physical Unclonable Functions (PUFs) with enhanced properties. We will implement various entropy sources making use of the fact that NM-based FETs can be significantly manipulated by their environment and interface. This determines the FET characteristic and in case of charge traps hysteretic switching behavior. We will pursue nanocavities in the Carbon-NanoTube Field-Effect Transistor (CNT-FET) structures to induce discrete modification of the gate architecture in order to further increase the entropy of the CNT-PUF. This enables quaternary PUFs with four distinct types of PUF cells, namely conducting, semiconducting, altered semiconducting, and non-conducting cells. We will also investigate configurable CNT-FET circuits to provide an even higher level of entropy, by tuning the hysteresis characteristics. Furthermore, we will examine cell selective erasability of the manufactured Circuit-PUFs, disallowing an attacker from accessing the inherent PUF secret in a low-cost manner. Building upon our previous works on non-invasive attacks against CNT-based PUFs, we will also test the resilience of the constructed CNT-PUFs against side-channel and fault-injection attacks.

• DFG Programme: Priority Programmes
• Subproject of: SPP 2253: Nano Security: From Nano-Electronics to Secure Systems