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Fun2D+ | 3D functional mesoscopic system based on 2D materials

Subject Area Microsystems
Term from 2020 to 2024
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 441728806
 
Final Report Year 2025

Final Report Abstract

This project aimed at developing a technology for miniaturized electronic system involving the fabrication of initially flat starting geometries with established lithography and pattern transfer techniques. Using shape morphing technologies such as MEMS origami, flat structures were transformed into three-dimensional objects by using out-of-plane rotations. As basic element, a cube was used. The starting structure for the cube was a cube net as flattened 2D representation. The cube facets and hinges between them were realized from atomic layer deposited Al2O3 thin films (< 100 nm). The exploiting shape morphing was based on mechanical properties (thermal expansion coefficient) mismatching and heating during the release step of the cube net using dry reactive etching and structural heating. Novel transistor architecture involving graphene layers as 2D materials were realized. A graphene adjustable-barriers transistor (GABT) and a hot electron transistor were patterned. A silicon–graphene–germanium GABT with an ultra-high current gain was demonstrated. A novel hot electron transistor structure with a record output current density of 800 A cm−2 and a high current gain α was fabricated using a scalable fabrication approach. Those graphene devices can be the basis for including electronics to the miniaturized system in further developments.

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