Aluminum Nitride for vertical Power Electronics

• Applicants: Professor Dr. Andreas Waag; Professor Dr. Bernd Witzigmann
• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: since 2021
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 462737320

This project is aiming at vertical device concepts based on Aluminum Nitride (AlN) for increased breakdown voltages in nitride power electronics. The large band gap and its high breakdown fields make AlN a very interesting material for power electronics. In addition, AlN is one of the few compound semiconductors, which is curing its crystal lattice during high temperature annealing under normal pressure atmosphere, much like in silicon technology. The main objective of this project is to develop suitable vertical transistor concepts based on AlN technology and transfer these concepts into devices, building up a knowledge base on AlN technology for power electronics, as well as demonstrating prototype devices for the integration into circuits and systems in a second phase.

• DFG Programme: Priority Programmes
• Subproject of: SPP 2312: Energy Efficient Power Electronics "GaNius"
• International Connection: Italy
• Cooperation Partner: Professor Matteo Meneghini