Project Details
Projekt
In-situ studies of plastic relaxation in InGaN buffers serving as substrates for overcoming current incorporation barriers in high In content nitride epitaxial layers
Applicant
Dr. Tobias Schulz
Subject Area
Synthesis and Properties of Functional Materials
Term
since 2021
Project identifier
Deutsche Forschungsgemeinschaft (DFG) - Project number 465219948
Light emitting diodes (LED) based on the InGaN material system are found in wide areas of our daily life, e.g. display illumination, automotive lighting or general lighting. Central to such a LED is the region where an electrical current is converted to light emission, occurring in a very thin (2-3 nm) thick InxGa1-xN film, denoted as quantum well. In theory, the emission wavelength of this quantum well should be easily tunable by varying the composition x between 0
DFG Programme
Research Grants
International Connection
Poland
Partner Organisation
Narodowe Centrum Nauki (NCN)
Co-Investigator
Dr. Martin Albrecht
Cooperation Partner
Dr. Julita Smalc Koziorowska
