Mineral Interface Doping (MID)

• Applicant: Dr. Peter Thissen
• Subject Area: Physical Chemistry of Solids and Surfaces, Material Characterisation ; Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: since 2023
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 527713232

Solar technology has evolved as continuous efforts to reduce the use of carbon as well as the increasing use of renewable resources and green energy, in order to keep pace with global energy demand. Research in this area focuses on maximizing the efficiency of solar cells using new technologies, as well as the development of efficient, cost-effective manufacturing materials. The increased demand of electronic devices experimented in recent years requires sophisticated technologies that are not always eco-friendly. In the research proposed here, we investigate a new methodology to dope without removing the native oxide, which means avoiding the use of any toxic substances such as POCl3 or HF. In the proposed research, we will make use of in situ infrared spectroscopy to investigate a fundamentally different grafting method, based on a recent discovery that makes possible to directly attach dopants on a silicon wafer. The process is called Tethering by aggregation and growth (T-BAG), which was initially developed for the deposition of self-assembled monolayers (SAM’s) of phosphonic acids. Recent investigations showed that the preparation technique is perfectly reproducible for the use of lamellar structured minerals. Such preparation is adapted for the deposition of thin films of phosphate mineral particles. Electronic devices are irrevocably integrated into our lives, yet their limited lifetime and often improvident disposal demands sustainable concepts to fully achieve a green electronic future. Research must shift its focus on substituting nondegradable and difficult-to-recycle materials, to allow either biodegradation or facile recycling of electronic devices. In this proposal we investigate a new doping process of silicon wafers without making use of any highly toxic or corrosive chemical substances.

• DFG Programme: Research Grants