Porenätzung in Germanium

• Applicant: Professor Dr. Helmut Föll
• Subject Area: Experimental Condensed Matter Physics
• Term: from 2003 to 2009
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 5404794

• Final Report Year: 2009

Final Report Abstract

No abstract available

Publications

• "Electrochemicalpore etching in Ge". Materials science in semiconductor processing 9(4-5), 694 (2006)
  C. Fang, J. Carstensen, and H. Föll
  
• "Electrochemicalpore etching in germanium". J. Electroanal. Chem. 589, 259 (2006)
  C. Fang, H. Föll, and J. Carstensen
  
• "Long Germanium nanowires prepared by electrochemical etching". Nano Lett. 6(7), 1578 (2006)
  C Fang, H. Föll, and J. Carstensen
  
• "Electrochemical pore etching in n- and p-type Ge". Solid State Phenomena 121-123, 37 (2007)
  C. Fang, J. Carstensen, and H. Föll
  
• "Electrochemicalpore etching in Ge - An overview". Phys. stat. sol. (a) 204(5), 1292 (2007)
  C. Fang, H. Föll, J. Carstensen, and S. Langa
  
• "Formation of metal wire arrays via electrodeposition in pores of Si, Ge and III-V semiconductors". Phys. Stat. Sol. (a) 204(5), 1388 (2007)
  C. Fang, E. Foca, L. Sirbu, J. Carstensen, I.M. Tiginyanu, and H. Föll