Untersuchungen von AIN und AIN-Al2O3-Strukturen als neue Materialien für elektronische Hochtemperatur-Hochleistungs-Bauelemente

Applicant Professor Dr. Ferdinand Scholz

Subject Area Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering

Term from 2005 to 2009

Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 5452886

Final Report Year 2008

Final Report Abstract

No abstract available

Photoluminescence, cathodoluminescence, and reflectance study of AIN layers and AIN single crystals. Superlattices and Microstructures 40 (2006) 513-518
G.M. Prinz, A. Ladenburger, M. Feneberg, M. Schirra, S. B. Thapa, M. Bickermann, B. M. Epelbaum, F. Scholz, K. Thonke, and R. Sauer
Band gap measurements of direct and indirect semiconductors using monochromated electrons. Phys. Rev. B 75 (2007) 195214
Lin Gu, V. Srot, W. Sigle, C. Koch, P. van Aken, F. Scholz, S. B. Thapa, C. Kirchner, M. Jetter, M. Rühle
MOVPE growth of high quality AIN layers and effects of Si doping. EW-MOVPE XII, Bratislava, Slovakia, June 2007, pp. 65-68
S. B. Thapa, J. Hertkorn, F. Scholz, G. M. Prinz, M. Feneberg, K. Thonke, R. Sauer
MOVPE Growth of High Quality AIN Layers and Effects of Si Doping. ICNS 2007, Las Vegas, USA, Sept. 2007; phys. stat. sol. (2008)
S. B. Thapa, F. Scholz, J. Hertkorn, G. M. Prinz, M. Feneberg, M. Schirra, K. Thonke, R. Sauer, J. Biskupek, U. Kaiser
Structural and spectroscopic properties of AIN layers grown by MOVPE. J. Crystal Growth 298 (2007) 383-386
S. B. Thapa, C. Kirchner, F. Scholz, G. M. Prinz, K. Thonke, R. Sauer, A. Chuvilin, J. Biskupek, U. Kaiser, D. Hofstetter