Photogalvanic effects in HgTe quantum well structures and all-electric detection of radiation polarization

• Applicant: Professor Dr. Sergey Ganichev
• Subject Area: Experimental Condensed Matter Physics
• Term: from 2005 to 2011
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 5456164

• Final Report Year: 2011

Final Report Abstract

In the following the most significant results are outlined: • Development of basic principles of all-electric detection of the polarization state of terahertz laser radiation by means of photogalvanic effects • Detection of the Stokes parameters of infrared and terahertz radiation applying photogalvanic effects in HgTe/CdHgTe quantum well structures • Observation of helicity dependent photocurrents in GaAs high electron mobility transistors (HEMTs) and Si-based field-effect-transistors (FETs). Understanding of the origin of these currents and demonstration of their potential for the development of fast THz radiation helicity detectors with sensitivities by several orders of magnitude larger than that based on photogalvanic effects • Detailed study of the circular photogalvanic effect in HgTe/CdHgTe quantum well structures of various design • Observation and study of the nonlinear magneto-gyrotropic photogalvanic effect in HgTe/CdHgTe quantum well structures • Investigation of the cyclotron resonance photoconductivity of a two-dimensional electron gas in HgTe/CdHgTe quantum wells • Optimization of the design of HgTe/CdHgTe nanostructures aimed to a sensitive detection of THz radiation • Investigation of THz photoconductivity of Pb1−x Snx Te(In) in view of a potential material for a highly sensitive detection of THz radiation

Publications

• All-electric detectors of the polarization state of terahertz laser radiation, J. Appl. Physics 103, 114504 (2008)
  S.D. Ganichev, W. Weber, J. Kiermaier, S.N. Danilov, P. Olbrich, D. Schuh, W. Wegscheider, D. Bougeard, G. Abstreiter, and W. Prettl
  
• Cyclotron resonance photoconductivity of a two-dimensional electron gas in HgTe quantum wells, Physica E 40, 1885 (2008)
  Z.D. Kvon, S.N. Danilov, N.N. Mikhailov, S.A. Dvoretsky, W. Prettl, and S.D.Ganichev
  
• Terahertz photoconductivity of Pb1−x Snx Te(In), Appl. Phys. Lett. 93, 264103 (2008)
  D. Khokhlov, L. Ryabova, A. Nicorici, V. Shklover, S.D. Ganichev, S. Danilov, and V. Bel’kov
  
• CdHgTe-based nanostructures a novel material for photodetectors, J. Opt. Technology 76, 787 (2009)
  S.A. Dvoretsky, Z.D. Kvon, N.N. Mikhailov, V.A. Schwez, B. Wittmann, S.N. Danilov, S.D. Ganichev, and A.L. Aseev
  
• Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures, J. Appl. Physics 105, 013106 (2009)
  S.N. Danilov, B. Wittmann, P. Olbrich, W. Eder, W. Prettl, L.E. Golub, E.V. Beregulin, Z.D. Kvon, N.N. Mikhailov, S.A. Dvoretsky, V.A. Shalygin, N.Q. Vinh, A.F.G. van der Meer, B. Murdin, and S.D. Ganichev
  
• Nonlinear magneto-gyrotropic photogalvanic effect, Phys. Rev. B 80, 075311 (2009)
  H. Diehl, V.A. Shalygin, L.E. Golub, S.A. Tarasenko, S.N. Danilov, V.V. Bel’kov, E.G. Novik, H. Buhmann, L.W. Molenkamp, C. Brüne, E.L. Ivchenko, and S.D. Ganichev
  
• Circular photogalvanic effect in HgTe/CdHgTe quantum well structures, Semicond. Sci. and Technology 25, 095005 (2010)
  B. Wittmann, S.N. Danilov, V.V. Bel’kov, S.A. Tarasenko, E.G. Novik, H. Buhmann, C. Brüne, L.W. Molenkamp, E.L. Ivchenko, Z.D. Kvon, N.N. Mikhailov, S.A. Dvoretsky, N. Q. Vinh, A. F. G. van der Meer, B. Murdin, and S.D. Ganichev
  
• Detection of high power THz radiation by GaAs high electron mobility and Si field effect transistors, Proc. 35rd International Conference on Infrared, Millimetre, and Terahertz Waves (IRMMW-THz 35) (2010)
  C. Drexler, N. Dyakonova, M. Schafberger, K. Karpierz, J. Karch, H. Videlier, Y. Meziani, P. Olbrich, W. Knap, and S.D. Ganichev
  
• Growth of HgTe Quantum Wells for IR to THz Detectors, J. of Electronic Materials 39, 918 (2010)
  S. Dvoretsky, N. Mikhailov, Y. Sidorov, V. Shvets, S. Danilov, B. Wittman, S.D. Ganichev