Project Details
Projekt
ReToGaN – Investigations of Reliability, Parameter Stability and Topologies for GaN-Based Power Electronics
Subject Area
Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Term
since 2024
Project identifier
Deutsche Forschungsgemeinschaft (DFG) - Project number 546259123
The project aims on the investigation and verification of methodologies for precise and stable temperature determination in p-GaN and Schottky-Gate GaN-HEMTs considering the dedicated requirements from application and reliability tests like power cycling. Known and new types of temperature sensitive parameters (TSEPs) are to be investigated, also with respect to stability, and compared with a high-speed temperature mapping technology via thermo-reflectance microscopy imaging (TRM). To validate applicability, different power-cycling DOEs (including forward and reverse heating) and Zth evaluations will be performed leading to a guideline for the most suitable temperature read-out method and an optimized thermal model that can be very accurate even for short-term events such as overcurrent/surge-current cases. Further, as outcome of the power-cycling DOE, optimized end-of-life criteria will be suggested, which are the basis for a appropriate lifetime model. These investigations are the basis for further improvement towards specific characteristics on device and package level while also introducing new strategies for improved topology designs, using the full potential of the new switches. In addition to the properties of the power semiconductors, the design of the circuit topologies is of great importance for the robustness and lifetime of power electronic converters. The load profiles as well as faults have different effects on the realization of circuits. With the new available power semiconductors, a couple of differences are to be expected. Currently, there is no systematic classification of power electronics converters and applications available, differentiating the reliability and robustness requirements and challenges regarding GaN-based power semiconductors. A corresponding study is an essential prerequisite for turning the results at device level into concrete recommendations for action, both for the semiconductors and for the applications and circuit topologies used in them. This project covers those fields in an interdisciplinary approach on device and topology level.
DFG Programme
Priority Programmes
Subproject of
SPP 2312:
Energy Efficient Power Electronics "GaNius"
