Co-design of Area-Dependent VCM Cell Arrays and CMOS Circuits for In-Memory Com-puting (A01)

• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: since 2025
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 528378584

When using memory cells to perform logic calculations or vector-matrix multiplication it is important to have an analog switching capability. This project will make analog switching elements available that can be integrated on top of a CMOS circuit. We will develop non-filamentary valence change memory (VCM) cells with both analog switching and very low current levels. The latter is highly advantageous in terms of suppressing parasitic effects in dense structures and significantly reducing power consumption. We will co-design the devices and the CMOS circuitry at an early stage.

• DFG Programme: CRC/Transregios
• Subproject of: TRR 404: Next Generation Electronics with Active Devices in Three Dimensions (Active-3D)
• Applicant Institution: Technische Universität Dresden
• Co-Applicant Institution: Rheinisch-Westfälische Technische Hochschule Aachen
• Business and Industry: AMO GmbH; Gesellschaft für Angewandte Mikro- und Optoelektronik mbH; NaMLab gGmbH; Forschungszentrum Jülich GmbH ; Peter Grünberg Institut (PGI)
• Participating Institution: Max-Planck-Institut für Mikrostrukturphysik; Department of Nano-Systems from ions, spins and electrons (NISE)
• Participating University: Ruhr-Universität Bochum; Fakultät für Elektrotechnik und Informationstechnik
• Project Heads: Professorin Dr. Regina Dittmann; Dr.-Ing. Stefan Slesazeck