3D Integration of Tailored Phase-Change Memories (PCMs) (A03)

• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: since 2025
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 528378584

Phase change materials offer a very versatile method to achieve resistive switching devices that are inparticular well suited for storage applications and in-memory computing. At the Aachen site a world class activity on optimized phase change materials is available. The task of this project is to supply 3D integrable phase change blocks that can be used for storage and in-memory computing using tailored phase change materials optimized for the specific tasks. In Phases 2 and 3 also the possibilities of using phase change materials for heat management will be explored on top of continuing the work in connection with other devices.

• DFG Programme: CRC/Transregios
• Subproject of: TRR 404: Next Generation Electronics with Active Devices in Three Dimensions (Active-3D)
• Applicant Institution: Technische Universität Dresden
• Co-Applicant Institution: Rheinisch-Westfälische Technische Hochschule Aachen
• Project Heads: Professor Dr. Sven Ingebrandt; Professor Dr. Matthias Wuttig