Vertical Perovskite Field-Effect Transistors (A07)

• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: since 2025
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 528378584

For high frequency applications a vertical device architecture with very small dimensions is more beneficial compared to lateral device architectures. Perovskite materials have had great success in the field of improved solar cells. However, their application to other semiconductor devices is not explored in the same way. They offer distinct benefits in terms of integration technology for the BEOL. Based on the leading activities in perovskite solar cells at TU Dresden and the integration know-how at AMO, here a novel, vertical device concept utilizing perovskites will be at the center of the research. The project will demonstrate the concept in Phase 1 and supply vertical devices with medium to high performance.

• DFG Programme: CRC/Transregios
• Subproject of: TRR 404: Next Generation Electronics with Active Devices in Three Dimensions (Active-3D)
• Applicant Institution: Technische Universität Dresden
• Co-Applicant Institution: Rheinisch-Westfälische Technische Hochschule Aachen
• Project Heads: Maryam Mohammadi, Ph.D.; Professorin Dr. Yana Vaynzof