Project Details
Projekt
Scandium nitride-based templates lattice-matched to conventional III-nitrides – BIFRÖST
Subject Area
Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Experimental Condensed Matter Physics
Synthesis and Properties of Functional Materials
Experimental Condensed Matter Physics
Synthesis and Properties of Functional Materials
Term
since 2025
Project identifier
Deutsche Forschungsgemeinschaft (DFG) - Project number 563184623
A novel nitride with the potential for tuning the lattice constant and band gaps separately, allowing lattice matching across a wider range and at the same time avoiding strain effects, would be of utmost relevance for nitride technology, resolving numerous issues in electronic and photonic devices related to these aspects in today´s nitride technology. Scandium-containing nitrides offer all these options. The potential of modifying the lattice parameter yields strain-controlled device structures. In addition, AlScN adds promising ferroelectric and electro-optic functionality to the nitride family, which can be used in optical modulators or non-volatile memory. Non-volatile ferroelectric and electro-optic functionality are extremely interesting for many applications, including future optical neuromorphic compute processors, where both photodiodes and microLED arrays as well as electronics and passive memory elements are needed on the same chip. In this project, we will explore AlScN and its potential for full monolithic integration into conventional nitride technology. For that, we will use molecular beam epitaxy (MBE) as an ideal tool for developing high-quality AlScN growth independent from the availability of suitable chemical precursors. We will combine this with MOVPE growth of state-of-the-art thin film GaN devices, and – after chip processing – explore various devices and applications. The monolithic integration of MBE and MOVPE grown thin films, complemented by a full-scale chip processing capability, is quite unique. This project aims to unveil the device-enhancement potential of selected novel nitrides with Sc, and at a later stage also include other transition metals like La and Y, exploiting unprecedented lattice-matching capabilities, ferroelectricity, and large differences in index of refraction for waveguides, switches, isolators and in the long run for optical neuromorphic compute cores.
DFG Programme
Priority Programmes
