CVD system for the production of semiconducting 2D materials on wafer scale

• Subject Area: Condensed Matter Physics
• Term: Funded in 2025
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 566899835

A CVD system with optical in-situ access for the growth of 2-dimensional transition metal dichalcogenides, tin disulfide and gallium monochalcogenides on up to 4” substrates is to be procured. A special device configuration allows the supply of precursors via separate gas flows and enables a high variability of processes with precise process control and high homogeneity over the substrate. A double chamber system with a vacuum transfer chamber enables the production of 2D heterostructures with precise interfaces and reduced contamination. Raman signals will be recorded by means of an optical in-situ access to study layer growth and strain formation. Photoluminescence measurements before and after exposure to ambient conditions will make it possible to investigate the influence of adsorbates on the optical material properties. The planned investigations will focus on 2D semiconductors, in particular the transition metal dichalcogenides MoS2 and WS2, the corresponding selenides (WSe2, MoSe2), SnS2, as well as the metal monochalcogenides Ga(S,Se) for potential applications in optoelectronics (LEDs, photodetectors) and electronics (field-effect transistors). The main focus of the planned research activities lies in the elucidation and control of defect formation (e.g. by comparing carbon-containing and carbon-free approaches), in the development of low-temperature growth processes for the integration of these 2D semiconductors into existing material platforms, as well as the investigation of 2D heterostructures and of ternary Ga(S,Se) materials, in each case with a view to homogeneity on wafer scale (up to 4").

• DFG Programme: Major Research Instrumentation
• Major Instrumentation: CVD-Anlage zur Herstellung von halbleitenden 2D-Materialien auf Waferskala
• Instrumentation Group: 0920 Atom- und Molekularstrahl-Apparaturen
• Applicant Institution: Universität Duisburg-Essen
• Leader: Professor Dr. Gerd Bacher