Dry etching system

• Subject Area: Condensed Matter Physics
• Term: Funded in 2026
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 580419678

The precise structuring of III–V semiconductors (in particular arsenides, phosphides, and antimonides) is of central importance for numerous optical, optoelectronic, and quantum-optical applications. A key role in this context is played by ICP-based dry etching technology, which—thanks to its anisotropic etching behavior—enables highly accurate processing of III–V semiconductor substrates. It allows the fabrication of deeply etched structures with nearly vertical sidewalls and freely designable bottom surfaces, which is particularly advantageous for the realization of functional micro- and nanostructures. While wet-chemical etching methods rely on crystal-orientation-dependent selectivity and therefore offer only limited design flexibility, ICP dry etching allows much more flexible geometry design—an essential advantage in the development of complex components based on III–V semiconductors. At KIT, III–V semiconductors and components based on their nanostructuring constitute a growing research field that has gained strong momentum through two recent professorial appointments. Modern fabrication processes and competitive research require equipment that not only ensures high process stability but also allows flexible parameter control and precise process monitoring. New ICP-RIE systems feature powerful ICP sources, integrated substrate cooling, etch-depth endpoint detection, and rapid gas switching capabilities, enabling the realization of ideally orthogonal sidewalls with well-defined transitions to the etched floor. In light of these developments, the acquisition of a state-of-the-art ICP dry etching system for processing III–V semiconductors is not only desirable but essential. It represents a key prerequisite for opening up new research areas in collaboration with the two newly appointed professorships and for ensuring the institute’s long-term technological competitiveness.

• DFG Programme: Major Research Instrumentation
• Major Instrumentation: Trockenätzanlage
• Instrumentation Group: 0910 Geräte für Ionenimplantation und Halbleiterdotierung
• Applicant Institution: Karlsruher Institut für Technologie
• Leader: Dr. Tobias Huber-Loyola