Wachstum von AIGaN mit hoher struktureller Perfektion mittels HVPE
Zusammenfassung der Projektergebnisse
Some of the objectives of the project, that is, free-standing AlGaN layers for characterization of basic material properties and for use as pseudo-substrates for UV-B LEDs have proven to be too ambitious on the given time scale. However, these goals seem attainable in the planned continuation of the work. Within the project, the realization of AlGaN layer growth by HVPE succeeded in the entire composition range. A reactor was redesigned successfully and the AlGaN layer thickness was increased from the nm range to a range 20 to 40 microns by process optimization, development and use of proper patterned sapphire substrates. The crystal quality was improved and dislocation densities in the 109 cm-2 range and high transmittance were achieved. The results are important prerequisites for further research and future commercial exploitation.
Projektbezogene Publikationen (Auswahl)
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„HVPE of AlxGa1−xN layers on planar and trench patterned sapphire”, J. Cryst. Growth 353 (2012) 129
S. Hagedorn, E. Richter, U. Zeimer, D. Prasai, W. John, M. Weyers
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"Origin of a-plane (Al,Ga)N formation on patterned c-plane AlN/sapphire templates", J. Phys.: Conf. Ser. 471 (2013) 012038
A. Mogilatenko, H. Kirmse, S. Hagedorn, E. Richter, U. Zeimer, M. Weyers, G. Tränkle
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"Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy", J. Appl. Phys. 113 (2013) 093505
A. Mogilatenko, S. Hagedorn, E. Richter, U. Zeimer, D. Goran, M. Weyers, G. Tränkle
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„HVPE growth of thick Al0.45Ga0.55N layers on trench patterned sapphire substrates”, Phys. Stat. Sol. C 10 (2013) 355
S. Hagedorn, E. Richter, U. Zeimer, M. Weyers
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“Hydride Vapor-Phase Epitaxy of c -Plane AlGaN Layers on Patterned Sapphire Substrates”, J. Electron. Mat. 43 (2014) 814
E. Richter, S. Fleischmann, D. Goran, S. Hagedorn, W. John, A. Mogilatenko, D. Prasai, U. Zeimer, M. Weyers, G. Tränkle
