Single quantum dot based lasers
Zusammenfassung der Projektergebnisse
In conclusion, we have developed a technology allowing us to fabricate site-controlled QDs with tailored morphology, over a wide range of QD-pitches. In our growth and fabrication scheme, the occupancy of QDs per nanohole can be flexibly manipulated by either the nanohole size (i.e. the lithography technique) or the general growth conditions. This allows for the fabrication of site-selected QD molecules, which can potentially be employed to study lateral inter-QD coupling effects on a scalable platform, and more importantly for the realization of single SCQD on QD pitches suitable for the integration into photonic microresonators. The high yield of optically active QDs was confirmed applying cathodoluminescence. By carefully optimizing the growth conditions, we could reduce the average single QD linewidth, which is a figure of merit for single QD based investigations, down to 133 µeV. Indeed, values as small as 25 µeV (representing the state-of-the art for these kind of QDs at the time) were measured, which makes them very promising for quantum light application and single quantum dot laser fabrication. These kind of QDs were integrated into slab membrane structures, and photonic crystal nanocavities were fabricated by the project partner in Japan. In these structures, clear signatures of optical resonances with very high Q factors were measured, which is considered as a first important step towards the realization of a deterministic single QD based laser. Beyond, we developed a fully compatible platform for the integration of positioned QDs in threedimensional photonic crystal cavities with a full optical bandgap.
Projektbezogene Publikationen (Auswahl)
- "Site-controlled quantum dots: Narrow emission linewidth and electrically driven single photon sources”, 17th International Conference on Molecular Beam Epitaxy (MBE 2012), 23. - 28. September 2012, Nara (Japan)
A. Huggenberger, S. Maier, P. Gold, T. Heindel, S. Reitzenstein, A. Forchel, C. Schneider, S. Höfling, and M. Kamp
- "Growth and device integration of high quality site-controlled In(Ga)As quantum dots”, International conference on Small Science", 14-17. August 2011, Sydney (Australia)
C. Schneider, A. Huggenberger, T. Heindel, M. Kamp, S. Reitzenstein, Sven Höfling, Lukas Worschech, and Alfred Forchel
- "Growth and device integration of high quality sitecontrolled In(Ga)As quantum dots”, International Nano-optoelectronic workshop, 24. Juni-6. August 2011, St. Petersburg (Russia) and Würzburg (Germany)
C. Schneider, A. Huggenberger, T. Heindel, M. Kamp, S. Reitzenstein, S.Höfling, L. Worschech, and A. Forchel
- "Narrow spectral linewidth from single sitecontrolled In(Ga)As quantum dots with high uniformity", Appl. Phys. Lett. 98, 131104 (2011)
A. Huggenberger, S. Heckelmann, C. Schneider, S. Höfling, S. Reitzenstein, L. Worschech, M. Kamp, and A. Forchel
- "Site-controlled In (Ga) As/GaAs quantum dots for integration into optically and electrically operated devices”. Journal of Crystal Growth 323(1), 194-197 (2011)
A. Huggenberger, C. Schneider, C. Drescher, S. Heckelmann, T. Heindel, S. Reitzenstein, M. Kamp, S. Höfling, L. Worschech, and A. Forchel
- "Site-controlled quantum dots in an electrically driven single-sided micropillar cavity", Frühjahrstagung der Deutschen Physikalischen Gesellschaft, 2011, Dresden (Germany)
S. Maier, A. Huggenberger, C. Schneider, T. Heindel, S. Heckelmann, S. Reitzenstein, S. Höfling, L. Worschech, M. Kamp, A. Forchel
- “Narrow emission linewidth from sitecontrolled InAs quantum dots grown on patterned (100) GaAs substrate", International Symposium on Compound Semiconductors, 22 – 26 May 2011, Berlin (Germany)
A. Huggenberger, C. Schneider, S. Heckelmann, S. Herrmann, M. Kamp, S. Reitzenstein, S. Höfling, L. Worschech, and A. Forchel
- ”Quantum Devices Based on Positioned Quantum Dots” Virtual Conference on Nanoscale Science and Technology 26. - 30. October 2011, Chengdu (China)
S. Höfling, A. Huggenberger, C. Schneider, V. Baumann, M. Strauß, T. Sünner, T. Heindel, L. Worschech, S. Reitzenstein, M. Kamp, and A. Forchel
- ”Single site-controlled In(Ga)As quantum dots for nanoelectronic and quantum optical devices”, 1st Annual Nano-Science and Technology Congress , 23. - 26. October 2011, Dalian (China)
S. Höfling, C. Schneider, T. Sünner, A. Huggenberger, C. Kistner, T. Heindel, S. Göpfert, L. Worschech, S. Reitzenstein, M. Kamp, and A. Forchel
- ”Site-controlled In(Ga)As quantum dots with narrow 3 emission linewidth for integration into nanophotonic devices”, The International Quantum Electronics Conference, 29-31 August 2011, Sydney (Australia)
A. Huggenberger, C. Schneider, T. Heindel, M. Kamp, S. Reitzenstein, S. Höfling, L. Worschech, and A.Forchel
- "Growth and Device Integration of Site-Controlled Quantum Dots“, Frühjahrstagung der Deutschen Physikalischen Gesellschaft, 25. - 30. March 2012, Berlin (Germany)
S. Höfling, C. Schneider, A. Huggenberger, V. Baumann, M. Strauß, T. Sünner, T. Heindel, L. Worschech, S. Reitzenstein, M. Kamp, and A. Forchel
- “Growth and device integration of high quality site-controlled In(Ga)As quantum dots”, 9th international workshop on epitaxial semiconductors on patterned substrates and novel index surfaces (ESPS-NIS 9), 7-9. Mai 2012, Eindhoven (Netherlands)
C. Schneider, A. Huggenberger, T. Heindel, S. Reitzenstein, S. Höfling, A. Forchel, and M. Kamp
- “Quantum Dot Microcavities: From Basic Physics to Applications in Quantum Communication”,42nd International School and Conference on the Physics of Semicondutcors 24. - 27. June 2013, Jaszowiec (Poland)
S. Höfling, C. Schneider, T. Heindel, M. Rau, H. Weier, K. De Greve, P. McMahon, Y. Yamamoto. H. Weinfurter, S. Reitzenstein, M. Kamp, and A. Forchel
- "Temperature dependency of the emission properties from positioned In(Ga)As/GaAs Quantum Dots". AIP Advances 4, 097128 (2014). 5 S.
T. Braun, C. Schneider , S. Maier, R. Igusa, S. Iwamoto, A. Forchel, S. Höfling, Y. Arakawa, and M. Kamp
(Siehe online unter https://doi.org/10.1063/1.4896284)
