Defect engineering and scaling of resistively switching oxide thin films (C02)

• Subject Area: Thermodynamics and Kinetics as well as Properties of Phases and Microstructure of Materials
• Term: from 2011 to 2023
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 167917811

In project C2 we will further clarify the details of the oxygen exchange reaction such as the role of car-bon and hydrogen and their interplay with defects at the oxide thin film surface. A special focus of the third funding period will be to study the scaling limits of crystalline model systems (HfO2 and SrTiO3) with respect to the correlation between the atomic and electronic structure of certain types of defects and phases, the differences in the field induced microscopic changes and the resulting electrical changes. Based on this knowledge, we will develop strategies for the design of thin films with optimized defect configuration and phase for improved reliability and scaling potential for future ReRAM applications.

• DFG Programme: Collaborative Research Centres
• Subproject of: SFB 917: Resistively Switching Chalcogenides for Future Electronics - Structure, Kinetics and Device Scalability: 'Nanoswitches'
• Applicant Institution: Rheinisch-Westfälische Technische Hochschule Aachen
• Project Head: Professorin Dr. Regina Dittmann