Interaction effects and gateless patterning in epitaxial graphene on silicon carbide (0001)

• Applicant: Professor Dr. Heiko B. Weber
• Subject Area: Experimental Condensed Matter Physics
• Term: from 2013 to 2017
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 242781498

We will explore fundamental charge transport mechanisms in graphene, relying on the specific strengths of our material system, that is homogeneity, large-scale availability, and epitaxial control on the interface substrate-graphene.We will investigate low-temperature charge transport, where we will characterize the electron-electron-interaction corrections. By means of a refined data analysis, we will gain sensitivity to Kondo effect, which may allow to find a Kondo system. By controlled addition of structural defects we willstudy the transition from band transport to hopping transport. Special emphasis is on interaction effects in bilayer graphene. In a second line of experiments, we will pattern the chemical potential in the graphene layer laterally by means of locally selective intercalation, i.e. without the use of metallic gate electrodes. This will pave the way for novel experiments.

• DFG Programme: Priority Programmes
• Subproject of: SPP 1459: Graphen