Thermal Assessment of AlInN/GaN High Electron Mobility Transistors

• Applicant: Dr. Martin Feneberg
• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering ; Experimental Condensed Matter Physics
• Term: from 2013 to 2014
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 252275599

AlInN HEMTs are a very promising new kind of transistor strcucture. One of their major advantages is e.g. the possibility of a higher current density compared to more conventional transistor types. However, nearly nothing is known yet about the reliability of this HEMT type. This project focusses on a comparison of electrical transistor characteristics to thermal imaging methods allowing access to reliability issues. A special focus will be laid on Raman spectroscopy/thermography.

• DFG Programme: Research Fellowships
• International Connection: United Kingdom
• Host: Professor Dr. Martin Kuball