Fabrication of GaAs-based tailored quantum confined semiconductor structures in functional environment (Z01)

• Subject Area: Physics
• Term: from 2015 to 2018
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 249492093

In this project we will provide tailored GaAs-based ultra-pure semiconducting heterostructures (quantum wells and dots) in functional environments. It is thus the essential material and technology basis of numerous projects in the ICRC, creating custom-tailored systems. For fabrication, rapid thermal annealing and focused ion beam implantation will be combined with molecular beam epitaxy, including In-flush techniques. For characterization photoluminescence, Hall measurements, capacitance-voltage spectroscopy and Fourier transform infrared spectroscopy will be employed. Complementarily doped, monolithic epitaxial gates will control the carrier densities in the heterostructures.

• DFG Programme: CRC/Transregios
• Subproject of: TRR 160: Coherent manipulation of interacting spin excitations in tailored semiconductors
• Applicant Institution: Technische Universität Dortmund
• Co-Applicant Institution: Ruhr-Universität Bochum
• Project Heads: Dr. Arne Ludwig; Professor Dr. Andreas Dirk Wieck