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Functional layers of nanometer-thick YIG films and microstructured surfaces for spintronic applications

Subject Area Synthesis and Properties of Functional Materials
Microsystems
Term from 2015 to 2023
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 271741898
 
Final Report Year 2023

Final Report Abstract

This project successfully demonstrated the development of nm-thick Yttrium Iron Garnet (YIG) and Gallium-substituted YIG (Ga:YIG) films using the LPE (Liquid Phase Epitaxy) technique for insulator-based spintronic applications. Three research teams contributed to the project: the LPE growth methodology was established and optimized at INNOVENT in Jena, while the samples were characterized and used in applied research by TU Kaiserslautern and University of Vienna. The key achievements include: (i) the development of methodology to grow the nanometer-thick YIG and YIG-based films of high quality and excellent microwave properties; (ii) the discovery of a novel physical phenomenon of Bose-Einstein Condensation (BEC) induced by rapid cooling, and means to control it; (iii) the successful nanopatterning of the nm-thick films and the investigation of their spin-wave dispersion; (iv) discovery of the fast isotropic exchange spin waves and magnonic foldover effects in partially magnetic compensated Ga:YIG thin films followed by the fabrication of logic prototypes; (v) development of magnetic compensated GaLa:YIG films with robust in-plane magnetic anisotropy; (vi) performance of nonlinear excitation of self-normalized exchange spin waves; (vii) observation of a propagating spin wave in a wide temperature range from millikelvin to room temperature; (viii) parametric generation of the spin waves in nanoscaled YIG magnonic conduits, (ix) design of nanoscale spin-wave logic and data-processing prototypes. The nanoscale YIG films and microstructured surfaces are now available for the fabrication of a wide variety of magnetic devices for digital and analog information transport and processing. The functional layers are suitable for Boolean or wave-based, neuromorphic and non-Boolean devices for conventional and unconventional computing applications, to complement the most advanced CMOS architecture.

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