Flexible analoge und digitale Grundschaltungen in amorphen Metalloxiden
Zusammenfassung der Projektergebnisse
The feasibility of amorphous metal oxide semiconductor zinc-tin-oxide for low frequency applications in analog and digital domain has been demonstrated. While transit frequencies of field-effect transistors are sufficient for applications in communications systems operating in the 10 MHz frequency range, the realized circuits in analog and digital domain are only working in the kHz range for transistor gate length of 20 µm. The current status of the technology did unfortunately not prove sufficiently mature to address wireless communication systems together with a third project partner according to our original plan for the second project phase. Several items are addressed in the latest mask sets in order to improve performance in future work by the technology team: Decrease gate length to technical limit, reduce gate and drain/source separation to 5 µm, add pad metal to connection of gate and wiring metal to avoid non-linear behavior. Further improvements are expected from shifting the transistor threshold volt in the negative region und reduction of trap density in the semiconductor layers.
