Resistive switching mechanism in Mott oxide insulators (B10)

• Subject Area: Synthesis and Properties of Functional Materials
• Term: from 2015 to 2023
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 167917811

Project B10 explores the different resistive switching mechanisms that occur in devices using Cr-doped V2O3 Mott material, as function of material structure, oxygen stoichiometry and Cr-doping level, and elec-trodes used. In particular, it aims to investigate if electron correlation effects (i.e. a true “Mott” transition) could be the mechanism involved in the volatile and/or non-volatile resistive switching observed in devices with symmetric electrodes. Thus, temperature and possibly pressure-dependent switching experiments are planned as well as detailed characterization by TEM and ATP.

• DFG Programme: Collaborative Research Centres
• Subproject of: SFB 917: Resistively Switching Chalcogenides for Future Electronics - Structure, Kinetics and Device Scalability: 'Nanoswitches'
• Applicant Institution: Rheinisch-Westfälische Technische Hochschule Aachen
• Project Head: Dr. Dirk Wouters