Project Details
Projekt Print View

Self-Aligned Short Channel Complementary Field Effect Transistors on Transparent Substrates (SACFETTS)

Subject Area Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Term from 2016 to 2019
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 318540667
 
Based on p-type organic and n-type ZnO- thin-film transistors on transparent substrates an advanced complementary transistor integration technique with short channel capability will be developed and analyzed. A shrink in the transistor channel length and a reduction of the parasitic capacitances from the gate to the drain/source contacts by self-alignment will shrink the delay time and will improve the RF-characteristics of these FETs. Additionally a transfer from ZnO to ZnO/SnO2 nanoparticle films and an application of DNTT or C8-BTBT will raise the transistors charge carrier mobilities into the >10 cm2/(Vs) range. This will enable electronics for high frequencies of some tenth of MHz at a low production cost level. Main requests for processing of the devices are: - Self-alignment of the gate structures by special UV light exposure technique - Extension of the technique into the sub-µm range - Introduction of a suitable gate dielectric layer and analysis on the transistors cut-off frequency - A common metallization for both types of transistors including contact resistance analysis - Compensation of instability effects due to traps and interface states - Quality and parameter analysis: Comparison of standard and self-aligned transistors with inverted coplanar and inverted staggered device setups - Complementary inverter setups with self-aligned transistors in comparison to standard transistors For further developments attention will be paid to low temperature processing and ink jet printing capability for the applied layers
DFG Programme Research Grants
 
 

Additional Information

Textvergrößerung und Kontrastanpassung