Epitaxy of intra-plane ordered (In,Ga)N monolayers towards single photon emission

• Antragsteller: Dr. Martin Albrecht
• Fachliche Zuordnung: Experimentelle Physik der kondensierten Materie
• Förderung: Förderung von 2017 bis 2021
• Projektkennung: Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 323347164

• Erstellungsjahr: 2022

Zusammenfassung der Projektergebnisse

Keine Zusammenfassung vorhanden

Projektbezogene Publikationen (Auswahl)

• (2018). "Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells." Physical Review Materials 2, 011601(R)
  Lymperakis, L., et al.
  
• (2018). "Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer." Sensors 18 2065
  Wang, S., et al.
  
• (2018). "High-electron-mobility InN epilayers grown on silicon substrate." Applied Physics Letters 112, 162102
  Liu, H. P., et al.
  
• (2018). "Molecular beam epitaxy of single-crystalline aluminum film for low threshold ultraviolet plasmonic nanolasers." Applied Physics Letters 112, 231904
  Liu, S. L., et al.
  
• (2018). "Transition of dominant lattice sites of Mg in InN:Mg revealed by Raman scattering." Superlattices and Microstructures 120: 533-539
  Chen, Z., et al.
  
• (2019). "Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN." Advanced Functional Materials 29 1902608
  Wang, P., et al.
  
• (2019). "Single photon source based on an InGaN quantum dot in a sitecontrolled optical horn structure." Applied Physics Letters 115(2): 022101 -022101
  Sun, X. X., et al.
  
• (2019). "Single‐photon emission from a further confined InGaN/GaN quantum disc via reverse‐reaction growth." Quantum Engineering 1(3): e20
  Sun, X., et al.
  
• (2020). "Single-photon emission from isolated monolayer islands of InGaN." Light: Science & Applications 9: 159
  Sun, X., et al.