Project Details
Epitaxy of intra-plane ordered (In,Ga)N monolayers towards single photon emission
Applicant
Dr. Martin Albrecht
Subject Area
Experimental Condensed Matter Physics
Term
from 2017 to 2021
Project identifier
Deutsche Forschungsgemeinschaft (DFG) - Project number 323347164
Final Report Year
2022
Final Report Abstract
No abstract available
Publications
- (2018). "Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells." Physical Review Materials 2, 011601(R)
Lymperakis, L., et al.
(See online at https://doi.org/10.1103/PhysRevMaterials.2.011601) - (2018). "Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer." Sensors 18 2065
Wang, S., et al.
(See online at https://doi.org/10.3390/s18072065) - (2018). "High-electron-mobility InN epilayers grown on silicon substrate." Applied Physics Letters 112, 162102
Liu, H. P., et al.
(See online at https://doi.org/10.1063/1.5017153) - (2018). "Molecular beam epitaxy of single-crystalline aluminum film for low threshold ultraviolet plasmonic nanolasers." Applied Physics Letters 112, 231904
Liu, S. L., et al.
(See online at https://doi.org/10.1063/1.5033941) - (2018). "Transition of dominant lattice sites of Mg in InN:Mg revealed by Raman scattering." Superlattices and Microstructures 120: 533-539
Chen, Z., et al.
(See online at https://doi.org/10.1016/j.spmi.2018.06.026) - (2019). "Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN." Advanced Functional Materials 29 1902608
Wang, P., et al.
(See online at https://doi.org/10.1002/adfm.201902608) - (2019). "Single photon source based on an InGaN quantum dot in a sitecontrolled optical horn structure." Applied Physics Letters 115(2): 022101 -022101
Sun, X. X., et al.
(See online at https://doi.org/10.1063/1.5100323) - (2019). "Single‐photon emission from a further confined InGaN/GaN quantum disc via reverse‐reaction growth." Quantum Engineering 1(3): e20
Sun, X., et al.
(See online at https://doi.org/10.1002/que2.20) - (2020). "Single-photon emission from isolated monolayer islands of InGaN." Light: Science & Applications 9: 159
Sun, X., et al.
(See online at https://doi.org/10.1038/s41377-020-00393-6)