Compensating and recombination centers in CdTe and CdSe

• Applicant: Privatdozent Dr. Eduard Lavrov
• Subject Area: Experimental Condensed Matter Physics
• Term: from 2017 to 2022
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 377782997

Wide band gap semiconductors are now widely used in optoelectronics, as detectors and in thin film photovoltaic. Most of these applications suffer from detrimental impurity contamination. In this project, we will concentrate on the properties of CdTe and CdSe. Most impurities in these two materials are lighter than the host atoms; therefore vibrational mode spectroscopy is most useful to give the symmetry, charge state, binding energy, diffusion rate etc. The project investigates in particular sulfur-, oxygen-, hydrogen, and copper-related defects in CdTe and CdSe by Raman scattering, Fourier transform infrared absorption and capacitance spectroscopy. We will address the controversy concerning the unintentional incorporation of sulfur dioxide and hydrogen in CdTe and CdSe during the process of crystal growth.

• DFG Programme: Research Grants