III-V semiconductor nanowires: correlation of local electronic structure, conductivity, and carrier lifetime
Final Report Abstract
Semiconductor nanowires are promising building blocks for novel electronic and optoelectronic devices. They exhibit atomic and electronic properties as well as different crystallographic polytype structures that can be tailored for many potential applications from solar cells to nanoelectronics. However, the essential fundamental properties of nanowires are not yet sufficiently known. Two of these are particularly relevant for applications: First, the nanowire geometry leads to a very high surface-to-volume ratio. Accordingly, surface effects, such as Fermi level pinning, play a major role in the resulting properties of nanowires and the devices made from them. Second, nanowires often exhibit different polytype structures, twin boundaries, and stacking faults in addition to intentionally grown heterointerfaces. These influence the electronic properties, create band shifts and thereby determine the conductivity and the charge carrier lifetime. The aim of this project is to investigate the electronic properties of the side facets, defects and interfaces with atomic resolution and their correlation with conductivity and charge carrier lifetime. The results of the project are: (i) Interplay of point defect reactions and atomic-scale roughness of III–V nanowire sidewalls, (ii) Composition modulation and type I to type II band alignment transition by twinning in InAsSb nanowires (iii) Discovery of a novel chemical short-range order in a two-dimensional wurtzite single monolayer called iuliacumite, (iv) Direct measurement of band offsets on selective area grown In0,53Ga0,47As/InP heterojunction with multiple probe scanning tunneling microscopy, and (v) Investigation of Defect formation as well as Morphologic and electronic changes induced by hydrogen cleaning.
Publications
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Composition modulation by twinning in InAsSb nanowires. Nanotechnology, 30(32), 324005.
Schnedler, M.; Xu, T.; Portz, V.; Nys, J.-P.; Plissard, S. R.; Berthe, M.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, P. & Grandidier, B.
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Importance of point defect reactions for the atomic-scale roughness of III–V nanowire sidewalls. Nanotechnology, 30(32), 324002.
Díaz, Álvarez Adrian; Peric, Nemanja; Franchina, Vergel Nathali Alexandra; Nys, Jean-Philippe; Berthe, Maxime; Patriarche, Gilles; Harmand, Jean-Christophe; Caroff, Philippe; Plissard, Sébastien; Ebert, Philipp; Xu, Tao & Grandidier, Bruno
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Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs1–xSbx Shell on InAs Nanowires. Nano Letters, 19(12), 8801-8805.
Schnedler, M.; Xu, T.; Lefebvre, I.; Nys, J.-P.; Plissard, S. R.; Berthe, M.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, Ph. & Grandidier, B.
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Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions. Journal of Applied Physics, 128(18).
Freter, L.; Wang, Y.; Schnedler, M.; Carlin, J.-F.; Butté, R.; Grandjean, N.; Eisele, H.; Dunin-Borkowski, R. E. & Ebert, Ph.
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Atomically resolved study of initial stages of hydrogen etching and adsorption on GaAs(110). Physical Review Materials, 6(12).
Rosenzweig, D. S.; Hansemann, M. N. L.; Schnedler, M.; Ebert, Ph. & Eisele, H.
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Direct measurement of band offsets on selective area grown In0.53Ga0.47As/InP heterojunction with multiple probe scanning tunneling microscopy. Applied Physics Letters, 121(19).
Peric, Nemanja; Durand, Corentin; Berthe, Maxime; Lu, Yan; N.'Konou, Kekeli; Coratger, Roland; Lefebvre, Isabelle; Ebert, Philipp; Biadala, Louis; Desplanque, Ludovic; Wallart, Xavier & Grandidier, B.
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Surface states and Fermi-level pinning on non-polar binary and ternary (Al,Ga)N surfaces. Schriften des Forschungszentrums Jülich, Reihe Information Band 84 (2022). Dissertation RWTH Aachen University 2022, ISBN 978-3-95806-644-1
Lars Freter
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Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs(110) facets. Journal of Vacuum Science & Technology B, 41(4).
Rosenzweig, D. S.; Schnedler, M.; Dunin-Borkowski, R. E.; Ebert, Ph. & Eisele, H.
