Zink-Magnesium Oxinitride
Zusammenfassung der Projektergebnisse
Overall, we showed that ZnMgON thin films can be deposited with magnetron co-sputtering and that the electrical, optical and structural properties of ZnMgON thin films are generally suitable for TFT applications. According to the objectives, we showed that the electrical properties of ZnMgON are tunable by magnesium addition between 1 at.% and 7.5 at.% in a broad range from nHall = (10^15 − 10^19 ) cm−3 and µHall = (10 − 28) cm2 V−1 s−1 respectively. Further, we showed that the optical bandgap is tunable between 0.9 eV und 1.5 eV for 1 at.% to 7.5 at.% while the amorphous phase is maintained for magnesium cation concentrations < 3 at.%. In addition, the smooth surface topography of the a-ZnON thin films is maintained upon the addition of magnesium cations, and the ZnMgON thin films exhibit excellent long-term stability of electrical properties. We showed that the fundamental properties of ZnMgON are tunable and suitable for TFT applications. Promising proof of concept results on amorphous pn-heterodiodes with ZnMgON as n-type material were presented. However, more work has to be done to increase the rectification ratio of the amorphous heterodiodes.
Projektbezogene Publikationen (Auswahl)
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Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties. Journal of Applied Physics, 130(6).
John, P.; Al Khalfioui, M.; Deparis, C.; Welk, A.; Lichtensteiger, C.; Bachelet, R.; Saint-Girons, G.; Rotella, H.; Hugues, M.; Grundmann, M. & Zúñiga-Pérez, J.
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Tuning material properties of amorphous zinc oxynitride thin films by magnesium addition. APL Materials, 9(2).
Welk, A.; Reinhardt, A.; Herrfurth, O.; Schultz, T.; von Wenckstern, H.; Koch, N. & Grundmann, M.
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Analysis of Electrical Transport Properties of Amorphous Oxide Semiconductors by an Extended Percolation-Based Random Band-Edge Model. Physical Review Applied, 17(2).
Welk, A.; Reinhardt, A.; Herrfurth, O.; Splith, D.; von Wenckstern, H. & Grundmann, M.
